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The patterned growth of transition metal dichalcogenides (TMDs) and their lateral heterostructures is paramount for the fabrication of application-oriented electronics and optoelectronics devices. However, the large scale patterned growth of TMDs remains challenging. Here, we demonstrate the synthesis of patterned polycrystalline 2-D MoSthin films on device ready SiO/Si substrates, eliminating any etching and transfer steps using a combination of plasma enhanced atomic layer deposition (PEALD) and thermal sulfurization. As an inherent advantage of ALD, precise thickness control ranging from a monolayer to few-layered MoShas been achieved. Furthermore, uniform films with exceptional conformality over 3-D structures are obtained. Finally, the approach has been leveraged to obtain in-plane lateral heterostructures of 2-D MoSand WSthin films over a large area which opens up an avenue for their direct integration in future nano- and opto-electronic device applications.

nanotechnology

Large area, patterned growth of 2D MoS2 and lateral MoS2–WS2 heterostructures for nano- and opto-electronic applications