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We demonstrate a controllable p$-$n junction in a three$-$dimensional Diracsemimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. Thedevice exhibits four different conductance regimes with gate voltages, theunipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, wherep$-$n junctions are formed. The conductance in the p$-$n junction regimedecreases drastically when a magnetic field is applied perpendicular to thenanowire, which is due to the suppression of Klein tunneling. In this regime,the device shows quantum dot behavior. On the other hand, clear conductanceplateaus are observed in the n$-$n regime likely owing to the cyclotron motionof carriers at high magnetic fields. Our experiment shows that the ambipolartunability of DSM nanowires can enable the realization of quantum devices basedon quantum dots and electron optics.

Controllable p$-$n junctions in three$-$dimensional Dirac semimetal Cd$_3$As$_2$ nanowires