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The development of novel devices for neuromorphic computing andnon-traditional logic operations largely relies on the fabrication of wellcontrolled memristive systems with functionalities beyond standard bipolarbehavior and digital ON-OFF states. In the present work we demonstrate forTa$_2$O$_5$-based devices that it is possible to selectivelyactivate/deactivate two series memristive interfaces in order to obtainclockwise or counter-clockwise multilevel squared remanent resistance loops,just by controlling the (a)symmetry of the applied stimuli and independently ofthe nature of the used metallic electrodes. Based on our thoroughcharacterization, analysis and modeling, we show that the physical origin ofthis electrical behavior relies on controlled oxygen vacancies electromigrationbetween three different zones of the active Ta$_2$O$_{5-x}$ layer: a central --bulk -- one and two quasi-symmetric interfaces with reduced TaO$_{2-h(y)}$layers. Our devices fabrication process is rather simple as it implies the roomtemperature deposition of only one CMOS compatible oxide -- Ta-oxide -- and onemetal, suggesting that it might be possible to take advantage of theseproperties at low cost and with easy scability. The tunable opposite remanentresistance loops circulations with multiple -- analogic -- intermediate stablestates allows mimicking the adaptable synaptic weight of biological systems andpresents potential for non-standard logic devices.

Electric selective activation of memristive interfaces in TaO$_x$-based devices