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An energy-efficient voltage controlled domain wall device for implementing anartificial neuron and synapse is analyzed using micromagnetic modeling in thepresence of room temperature thermal noise. By controlling the domain wallmotion utilizing spin transfer or spin orbit torques in association withvoltage generated strain control of perpendicular magnetic anisotropy in thepresence of Dzyaloshinskii-Moriya interaction, different positions of thedomain wall are realized in the free layer of a magnetic tunnel junction toprogram different synaptic weights. The feasibility of scaling of such devicesis assessed in the presence of thermal perturbations that compromisecontrollability. Additionally, an artificial neuron can be realized bycombining this DW device with a CMOS buffer. This provides a possible pathwayto realize energy efficient voltage controlled nanomagnetic deep neuralnetworks that can learn in real time.

Voltage control of domain walls in magnetic nanowires for energy efficient neuromorphic devices