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It has been demonstrated that the switching of perpendicular magnetizationcan be achieved with spin orbit torque (SOT) at an ultrafast speed and lowenergy consumption. However, to make the switching deterministic, anundesirable magnetic field or unconventional device geometry is required tobreak the structure inverse symmetry. Here we propose a novel scheme forSOT-induced field-free deterministic switching of perpendicular magnetization.The proposed scheme can be implemented in a simple magnetic tunnel junction(MTJ) /heavy-metal system, without the need of complicated device structure.The perpendicular-anisotropy MTJ is patterned into elliptical shape andmisaligned with the axis of the heavy metal, so that the uniaxial shapeanisotropy aids the magnetization switching. Furthermore, unlike theconventional switching scheme where the switched final magnetization state isdependent on the direction of the applied current, in our scheme the bipolarswitching is implemented by choosing different current paths, which offers anew freedom for developing novel spintronics memories or logic devices. Throughthe macrospin simulation, we show that a wide operation window of the appliedcurrent pulse can be obtained in the proposed scheme. The precise control ofpulse amplitude or pulse duration is not required. The influences of keyparameters such as damping constant and field-like torque strength arediscussed as well.

Field-free spin-orbit-torque switching of perpendicular magnetization aided by uniaxial shape anisotropy