Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

We report the demonstration of a steep-slope field-effect transistor with an AlGaN/GaN MIS-HEMTs employing SiO2-based threshold switching devices in series with the source. The SiO2-based threshold switching devices exhibited steep slope when changing resistance states. The integrated steep-slope transistor showed a low subthreshold swing of sub-5mV/dec with a transition range of over 105 in the transfer characteristics in both sweep directions at room temperature, as well as the low leakage current (10-5 μA/μm) and a high ION/IOFF ratio (>107). Moreover, with the SiO2-based threshold switching devices we also observed a positive shift of threshold voltages of the integrated device. Results from more than 50 times transfer characteristics measurements also indicate the good repeatability and practicability of such steep-switching device, where the average steep slopes are below 10 mV/decade. This steep-slope transistor with oxide-based threshold switching devices can further extend to various transistor platforms like Si and III-V and are of potential interest for the development of power switching and high frequency devices.