English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We present femtosecond transient transmission (or absorbance) measurements insilicon nanowires in the energy range 1.1-3.5 eV, from below the indirectband-gap to above the direct band-gap. Our pump-probe measurements allow us togive a complete picture of the carrier dynamics in silicon. In this way weperform an experimental study with a spectral completeness that lacks in thewhole literature on carrier dynamics in silicon. A particular emphasis is givento the dynamics of the transient absorbance at the energies relative to thedirect band gap at 3.3 eV. Indeed, the use of pump energies below and above 3.3eV allowed us to disentangle the dynamics of electrons and holes in theirrespective bands. The band gap renormalization of the direct band gap is alsoinvestigated for different pump energies. A critical discussion is given on theresults below 3.3 eV where phonon-assisted processes are required in theoptical transitions.

Carrier dynamics in silicon nanowires studied via femtosecond transient optical spectroscopy from 1.1 to 3.5 eV