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We report on the fabrication and characterization of an optimized comb-driveactuator design for strain-dependent transport measurements on suspendedgraphene. We fabricate devices from highly p-doped silicon using deep reactiveion etching with a chromium mask. Crucially, we implement a gold layer toreduce the device resistance from $\approx51.6$ k$\mathrm{\Omega}$ to$\approx236$ $\mathrm{\Omega}$ at room temperature in order to allow forstrain-dependent transport measurements. The graphene is integrated bymechanically transferring it directly onto the actuator using apolymethylmethacrylate membrane. Importantly, the integrated graphene can benanostructured afterwards to optimize device functionality. The minimum featuresize of the structured suspended graphene is 30 nm, which allows forinteresting device concepts such as mechanically-tunable nanoconstrictions.Finally, we characterize the fabricated devices by measuring the Raman spectrumas well as the a mechanical resonance frequency of an integrated graphene sheetfor different strain values.

Fabrication of comb-drive actuators for straining nanostructured suspended graphene