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Magnetic sensors based on the magnetoresistance effects have a promisingapplication prospect due to their excellent sensitivity and advantages in termsof the integration. However, competition between higher sensitivity and largermeasuring range remains a problem. Here, we propose a novel mechanism for thedesign of magnetoresistive sensors: probing the perpendicular field bydetecting the expansion of the elastic magnetic Domain Wall (DW) in the freelayer of a spin valve or a magnetic tunnel junction. Performances of devicesbased on this mechanism, such as the sensitivity and the measuring range can betuned by manipulating the geometry of the device, without changing theintrinsic properties of the material, thus promising a higher integration leveland a better performance. The mechanism is theoretically explained based on theexperimental results. Two examples are proposed and their functionality andperformances are verified via micromagnetic simulation.

Magnetoresistive sensors based on the elasticity of domain walls