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The quality of graphene in nanodevices has increased hugely thanks to the useof hexagonal boron nitride as a supporting layer. This paper studies to whichextent hBN together with channel length scaling can be exploited in graphenefield effect transistors (GFETs) to get a competitive radio frequency (RF)performance. Carrier mobility and saturation velocity were obtained from anensemble Monte Carlo simulator that accounted for the relevant scatteringmechanisms (intrinsic phonons, scattering with impurities and defects, etc.).This information is fed into a self consistent simulator, which solves thedrift diffusion equation coupled with the two dimensional Poisson's equation totake full account of short channel effects. Simulated GFET characteristics werebenchmarked against experimental data from our fabricated devices. Oursimulations show that scalability is supposed to bring to RF performance animprovement that is, however, highly limited by instability. Despite thepossibility of a lower performance, a careful choice of the bias point canavoid instability. Nevertheless, maximum oscillation frequencies are stillachievable in the THz region for channel lengths of a few hundreds ofnanometers.

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor