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Part of developing new strategies for fabrications of nanowire structuresinvolves in many cases the aid of metal nanoparticles (NPs). It is highlybeneficial if one can define both diameter and position of the initial NPs andmake well-defined nanowire arrays. This sets additional requirement on the NPswith respect to being able to withstand a pre-growth annealing process (i.e.de- oxidation of the III-V semiconductor surface) in an epitaxy system.Recently, it has been demonstrated that Ag may be an alternative to using AuNPs as seeds for particle-seeded nanowire fabrication. This work brings lightonto the effect of annealing of Au, Ag and Au-Ag alloy NP arrays in twocommonly used epitaxial systems, the Molecular Beam Epitaxy (MBE) and theMetalorganic Vapor Phase Epitaxy (MOVPE). The NP arrays are fabricated with theaid of Electron Beam Lithography on GaAs 100 and 111B wafers and the evolutionof the NPs with respect to shape, size and position on the surfaces are studiedafter annealing using Scanning Electron Microscopy (SEM). We find that whilethe Au NP arrays are found to be stable when annealed up to 600 $^{\circ}$C ina MOVPE system, a diameter and pitch dependent splitting of the particles areseen for annealing in a MBE system. The Ag NP arrays are less stable, withsmaller diameters ($\leq$ 50 nm) dissolving during annealing in both epitaxialsystems. In general, the mobility of the NPs is observed to differ between thetwo the GaAs 100 and 111B surfaces. While the initial pattern is found beintact on the GaAs 111B surface for a particular annealing process and particletype, the increased mobility of the NP on the 100 may influence the initialpre-defined positions at higher annealing temperatures. The effect of annealingon Au-Ag alloy NP arrays suggests that these NP can withstand necessaryannealing conditions for a complete de-oxidation of GaAs surfaces.

Annealing of Au, Ag and Au-Ag alloy nanoparticle arrays on GaAs (100) and (111)B