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We report the multi-scale modeling and design of a gate-definedsingle-electron transistor in a MoS$_{2}$ bilayer. By combiningdensity-functional theory and finite-element analysis, we design a surface gatestructure to electrostatically define and tune a quantum dot and its associatedtunnel barriers in the MoS$_{2}$ bilayer. Our approach suggests new pathwaysfor the creation of novel quantum electronic devices in two-dimensionalmaterials.

Surface-gate-defined single-electron-transistor in a MoS$_{2}$ bilayer