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Two-dimensional group III monochalcogenides have recently attracted quiteattention for their wide spectrum of optical and electric properties, beingpromising candidates for optoelectronic and novel electrical applications,however in their pristine form they are very sensitive and vulnerable to oxygenin air. Here we present two newly designed vdW heterostructures based on hBN(hexagonal boron nitride) and GaTe or InTe monolayer. Using density functionaltheory we investigate electronic and optical properties of those structures.Their moderate band gap and an good absorption coefficient makes them excellentfor absorbers in wide spectrum, covering all from part of IR to far UVspectrum, with particularly good absorption of UV light. The hBN layer whichcan be beneficial for protection of sensitive GaTe and InTe does not onlypreserve their optical properties but also enhances it. Moreover, we confirmthat type of stacking does not affect any relevant properties, as all threestacking types are very similar in total energy and bandstructure is almost thesame for every one. This is especially important for easier experimentalrealization.

Novel wide spectrum light absorber heterostructures based on hBN/In(Ga)Te