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In this paper, we report the synthesis of high-quality Ta2Ni3Se8 crystalsfree of noble or toxic elements and the fabrication and testing ofphotodetectors on the wire samples. A broadband photoresponse from 405 nm to1550 nm is observed, along with performance parameters including relativelyhigh photoresponsivity (10 mA W^-1) and specific detectivity (3.5 * 10^7 Jones)and comparably short response time ({\tau}_rise = 433 ms, {\tau}_decay = 372ms) for 1064 nm, 0.5 V bias and 1.352 mW mm^-2. Through extensive measurementand analysis, it is determined that the dominant mechanism for photocurrentgeneration is the photo-bolometric effect, which is believed to be responsiblefor the very broad spectral detection capability. More importantly, thepronounced response to 1310 nm and 1550 nm wavelengths manifests its promisingapplications in optical communications. Considering the quasi-one-dimensionalstructure with layered texture, the potential to build nanodevices on Ta2Ni3Se8makes it even more important in future electronic and optoelectronicapplications.

Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8