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Achieving combination of spin and valley polarized states with topologicalinsulating phase is pregnant to promote the fantastic integration oftopological physics, spintronics and valleytronics. In this work, aspin-valley-coupled quantum spin Hall insulator (svc-QSHI) is predicted inJanus monolayer $\mathrm{CSb_{1.5}Bi_{1.5}}$ with dynamic, mechanical andthermal stabilities. The inequivalent valleys have opposite Berry curvature andspin moment, which can produce a spin-valley Hall effect. In the center ofBrillouin zone, a Rashba-type spin splitting can be observed due to missinghorizontal mirror symmetry. Moreover, monolayer $\mathrm{CSb_{1.5}Bi_{1.5}}$shows unique Rashba-splitting edge states. Both energy band gap andspin-splitting at the valley point are larger than the thermal energy of roomtemperature (25 meV) with generalized gradient approximation (GGA) level, whichis very important at room temperature for device applications. It is provedthat the spin-valley-coupling and nontrivial quantum spin Hall (QSH) state arerobust again biaxial strain. Our work may provide a new platform to achieveintegration of topological physics, spintronics and valleytronics.

Spin-valley-coupled quantum spin Hall insulator with topological Rashba-splitting edge states in Janus monolayer $\mathrm{CSb_{1.5}Bi_{1.5}}$