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We theoretically study the Coulomb drag resistivity and plasmon modesbehavior for a system composed of two parallel p-type doped GaS monolayers withMexican-hat valence energy band using the Boltzmann transport theory formalism.We investigate the effect of temperature,$\ T$, carrier density,$\ p$, andlayer separation,$\ d$, on the plasmon modes and drag resistivity within theenergy-independent scattering time approximation. Our results show that thedensity dependence of plasmon modes can be approximated by$\ p^{0.5}$. Also,the calculations suggest a$\ d^{0.2}$ and a$\ d^{0.1}$ dependencies for theacoustic and optical plasmon energies, respectively. Interestingly, we obtainthat the behavior of drag resistivity in the double-layer metalmonochalcogenides swings between the behavior of a double-quantum well systemwith parabolic dispersion and that of a double-quantum wire structure with alarge carrier density of states. In particular, the transresistivity valuereduces exponentially with increasing the distance between layers. Furthermore,the drag resistivity changes as$\ T^{2}/p^{4}$ ($\ T^{2.8}/p^{4.5}$) at low(intermediate) temperatures. Finally, we compare the drag resistivity as afunction of temperature for GaS with other Mexican-hat materials including GaSeand InSe and find that it adopts higher values when the metal monochalcogenidehas smaller Mexican-hat height.

Coulomb drag in metal monochalcogenides double-layer structures with Mexican-hat band dispersions