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Chemically _ driven isothermal close space vapour transport was used toprepare pure MoO2 films which were eventually converted to MoO3 by annealing inair. According to temperature_dependent Raman measurements, the MoO2/MoO3 phasetransformation was found to occur in the 225 _ 350 oC range; no other phaseswere detected during the transition. A clear change in composition and Ramanspectra, as well as noticeable modifications of the band gap and the absorptioncoefficient confirmed the conversion from MoO2 to MoO3. An extensivecharacterization of films of both pure phases was carried out. In particular, aprocedure was developed to determine the dispersion relation of the refractiveindex of MoO2 from the shift of the interference fringes the used SiO2/Sisubstrate. The obtained refractive index was corrected taking into account theporosity calculated from elastic backscattering spectrometry. The Debyetemperature and the residual resistivity were extracted from the electricalresistivity temperature dependence using the Bloch _ Gruneisen equation. MoO3converted samples presented very high resistivity and a typical semiconductingbehaviour. They also showed intense and broad luminescence spectra, which weredeconvoluted considering several contributions; and its behaviour withtemperature was examined. Furthermore, surface photovoltage spectra were takenand the relation of these spectra with the photoluminescence is discussed.

Properties of MoO2 and MoO3 Films Prepared from the Chemically Driven Isothermal Close Space Vapor Transport Technique