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We report an investigation of Metal Insulator Transition (MIT) usingconductivity and magnetoconductance (MC) measurements down to 0.3 K inNd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3}(LAO), SrTiO_{3} (STO), and NdGaO_{3}(NGO) by pulsed laser deposition. The filmgrown on LAO experiences a compressive strain and shows metallic behavior withthe onset of a weak resistivity upturn below 2 K which is linked to the onsetof weak localization contribution. Films grown on STO and NGO show a crossoverfrom a Positive Temperature Coefficient (PTC) resistance regime to NegativeTemperature Coefficient (NTC) resistance regime at definite temperatures. Weestablish that a cross-over from PTC to NTC on cooling does not necessarilyconstitute a MIT because the extrapolated conductivity at zero temperature\sigma_{0} though small (<10 S/cm) is finite, signalling the existence of a badmetallic state and absence of an activated transport. The value of \sigma_{0}for films grown on NGO is reduced by a factor of 40 compared to that for filmsgrown on STO. We show that a combination of certain physical factors makessubstituted nickelate (that are known to exhibit first order Mott typetransition), undergo a continuous transition as seen in systems undergoingdisorder/composition driven Anderson transition. The MC measurement alsosupport the above observation and show that at low temperature there exists apositive MC that arises from the quantum interference which co-exists with aspin-related negative MC that becomes progressively stronger as the electronsapproach a strongly localized state in the film grown on NGO.

Continuous transition from weakly localized regime to strong localization regime in Nd_{0.7}La_{0.3}NiO_{3} films