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In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn isobtained by ion implantation combined with pulsed laser melting. The sampleshows variable-range hopping transport behavior with a Coulomb gap in thevicinity of the Fermi energy, and the activation energy is reduced by anexternal magnetic field. A blocking super-paramagnetism is observed rather thanferromagnetism. Below the blocking temperature, the sample exhibits a colossalnegative magnetoresistance. Our studies confirm that the disorder-inducedelectronic phase separation occurs in (Ga,Mn)As samples with a Mn concentrationin the insulator-metal transition regime, and it can account for the observedsuperparamagnetism and the colossal magnetoresistance.

Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction