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The electronic structure of thin films of FeTe grown on Bi$_2$Te$_3$ isinvestigated using angle-resolved photoemission spectroscopy, scanningtunneling microscopy and first principles calculations. As a comparison, datafrom cleaved bulk \FeTe taken under the same experimental conditions is alsopresented. Due to the substrate and thin film symmetry, FeTe thin films grow onBi$_2$Te$_3$ in three domains, rotated by 0$^{\circ}$, 120$^{\circ}$, and240$^{\circ}$. This results in a superposition of photoemission intensity fromthe domains, complicating the analysis. However, by combining bulk and thinfilm data, it is possible to partly disentangle the contributions from threedomains. We find a close similarity between thin film and bulk electronicstructure and an overall good agreement with first principles calculations,assuming a p-doping shift of 65~meV for the bulk and a renormalization factorof around 2. By tracking the change of substrate electronic structure upon filmgrowth, we find indications of an electron transfer from the FeTe film to thesubstrate. No significant change of the film's electronic structure or dopingis observed when alkali atoms are dosed onto the surface. This is ascribed tothe film's high density of states at the Fermi energy. This behavior is alsosupported by the ab-initio calculations.

Electronic Structure of Fe$_{1.08}$Te bulk crystals and epitaxial FeTe thin films on Bi$_2$Te$_3$