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The electronic and the structural properties of two dimensional van der Waalsmetal/semiconductor heterostructures have been investigated throughfirst-principles calculations. We have considered the recently synthesizedborophene [Science {\bf 350}, 1513 (2015)], and the planar boron sheets (S1 andS2) [Nature Chemistry {\bf 8}, 563 (2016)] as the 2D metal layer, and thetransition metal dichalcogenides (TMDCs) \mose, and \wse\ as the semiconductormonolayer. We find that the energetic stability of those 2D metal/semiconductorheterojunctions is mostly ruled by the vdW interactions; however, chemicalinteractions also take place in borophene/TMDC. The electronic charge transfersat the metal/semiconductor interface has been mapped, where we find a a netcharge transfer from the TMDCs to the boron sheets. Further electronicstructure calculations reveal that the metal/semiconductor interfaces, composedby planar boron sheets S1 and S2, present a p-type Schottky barrier which canbe tuned to a p-type ohmic contact upon an external electric field.

Tuning the p-type Schottky barrier in 2D metal/semiconductor interface: boron-sheet/\mose, and /\wse