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We report measurements of Shubnikov-de Haas oscillations in the giant Rashbasemiconductor BiTeCl under applied pressures up to ~2.5 GPa. We observe twodistinct oscillation frequencies, corresponding to the Rashba-split inner andouter Fermi surfaces. BiTeCl has a conduction band bottom that is split intotwo sub-bands due to the strong Rashba coupling, resulting in twospin-polarized conduction bands as well as a Dirac point. Our results suggestthat the chemical potential lies above this Dirac point, giving rise to twoFermi surfaces. We use a simple two-band model to understand the pressuredependence of our sample parameters. Comparing our results on BiTeCl toprevious results on BiTeI, we observe similar trends in both the chemicalpotential and the Rashba splitting with pressure.

Evolution of the Fermi surface of BiTeCl with pressure