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We investigate the dependence of charge transfer on the intensity of drivinglaser field when SiO2 crystal is irradiated by an 800 nm laser. It issurprising that the direction of charge transfer undergoes a sudden reversalwhen the driving laser intensity exceeds critical values with different carrierenvelope phases. By applying quantum-trajectory analysis, we find that theBloch oscillation plays an important role in charge transfer in solid. Also, westudy the interaction of strong laser with gallium nitride (GaN) that is widelyused in optoelectronics. A pump-probe scheme is applied to control the quantumtrajectories of the electrons in the conduction band. The signal of chargetransfer is controlled successfully by means of theoretically proposedapproach.

Quantum-trajectory analysis for charge transfer in solid materials induced by strong laser fields