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We have investigated the electronic states of planar quantum dots at the ZnOinterface containing a few interacting electrons in an externally appliedmagnetic field. In these systems, the electron-electron interaction effects areexpected to be much stronger than in traditional semiconductor quantum systems,such as in GaAs or InAs quantum dots. In order to highlight that strongerCoulomb effects in the ZnO quantum dots, we have compared the energy spectraand the magnetization in this system to those of the InAs quantum dots. We havefound that in the ZnO quantum dots, the signatures of stronger Coulombinteraction manifests in an unique ground state that has very differentproperties than the corresponding ones in the InAs dot. Our results for themagnetization also exhibits behaviors never before observed in a quantum dot:We have found a stronger temperature dependence and other unexpected features,such as paramagnetic-like behavior at high temperatures for a quantum-dothelium.

Interaction-Driven Distinctive Electronic States of Artificial Atoms at the ZnO Interface