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We use first-principles simulations to investigate the topological propertiesof Bi$_2$Se$_3$ thin films deposited on amorphous SiO2, Bi$_2$Se$_3$/a-SiO$_2$,which is a promising substrate for topological insulator (TI) based deviceapplications. The Bi$_2$Se$_3$ films are bonded to a-SiO$_2$ mediated by vander Waals interactions. Upon interaction with the substrate, the Bi$_2$Se$_3$topological surface and interface states remain present, however the degeneracybetween the Dirac-like cones is broken. The energy separation between the twoDirac-like cones increases with the number of Bi$_2$Se$_3$ quintuple layers(QLs) deposited on the substrate. Such a degeneracy breaking is caused by (i)charge transfer from the TI to the substrate and charge redistribution alongthe Bi$_2$Se$_3$ QLs, and (ii) by deformation of the QL in contact with thea-SiO$_2$ substrate. We also investigate the role played by oxygen vacancies(V$_O$) on the a-SiO$_2$, which increases the energy splitting between the twoDirac-like cones. Finally, by mapping the electronic structure ofBi$_2$Se$_3$/a-SiO$_2$, we found that the a-SiO$_2$ surface states, even uponthe presence of V$_O$, play a minor role on gating the electronic transportproperties of Bi$_2$Se$_3$.

An ab initio investigation of Bi$_2$Se$_3$ topological insulator deposited on amorphous SiO$_2$