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The combination of micro-machined technology with the Atomic SpinGyroscope(ASG) devices could fabricated Chip Scale Atomic Spin Gyroscope(CASG).The core of the gyroscope is a micro-machined vapor cell which contains alkalimetal and isotope enriched noble gases such as 129Xe and 131Xe. The quadrupolarfrequency shift of 131Xe is key parameters which could affect the drift of theASG and is related to the material of the cell in which they are contained. Inmicro machined technology, the typical utilized material is silicon. In thisarticle, we studied the electric quadrupolar frequency shift of 131Xe atomswith the silicon wall of the micro-machined vapor cell. A cylindermicro-machined vapor cell is utilized in the experiment and a large part of theinner cell surface is composed of silicon material. We studied the temperaturedependence of the 129Xe spin relaxation and 131Xe frequency shifts to evaluatethe interaction of the nuclear spin with container wall and the alkali metalatoms. The results show that the average twisted angle of the 131Xe nuclearspins as they collide with the silicon wall is measured to be 29 *10^-6 rad.The desorption energy for the 131Xe nuclear spin to escape from the siliconsurface is Esi = 0.009eV . This study could help to improve the bias stabilityof the CASG which is a key parameter for the gyroscope as well as may developesa method to study the surface property of various material.

Quadrupolar interaction induced frequency shift of 131Xe nuclear spins on the surface of silicon