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We study IrCrMnZ (Z=Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs. These materials have highly spin-polarizedconduction electrons with partially occupied $\Delta_1$ band, which isimportant for coherent tunneling in parallel magnetization configuration. TheCurie temperatures of IrCrMnAl and IrCrMnGa are very high (above 1300 K) aspredicted from mean-field-approximation. The stability of ordered phase againstvarious antisite disorders has been investigated. We discuss here the effect of"spin-orbit-coupling" on the electronic structure around Fermi level. Further,we investigate the electronic structure of IrCrMnZ/MgO heterojunction along(001) direction. IrCrMnAl/MgO and IrCrMnGa/MgO maintain half-metallicity evenat the MgO interface, with no interfacial states at/around Fermi level in theminority-spin channel. Large majority-spin conductance of IrCrMnAl/MgO/IrCrMnAland IrCrMnGa/MgO/IrCrMnGa is reported from the calculation of ballisticspin-transport property for parallel magnetization configuration. We proposeIrCrMnAl/MgO/IrCrMnAl and IrCrMnGa/MgO/IrCrMnGa as promising MTJs with a weakertemperature dependence of tunneling magnetoresistance ratio, owing to theirvery high Curie temperatures.

IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study