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Motivated by the recent successful formation of the MoSi2N4 monolayer [Honget al., Sci. 369, 670 (2020)], the structural, electronic and magneticproperties of MoSi2N4 nanoribbons (NRs) is investigated for the first time .The band structure calculations showed spin-polarization in zigzag edges and anon-magnetic semiconducting character in armchair edges. For armchair-edges, weidentify an indirect to direct band gap shift compared to the MoSi2N4monolayer, and its energy gap increases with increasing NR width. Anisotropicelectrical and magnetic behavior is observed via band structure calculations inthe zigzag and armchair edges, where, surprisingly, for the one type ofzigzag-edges configuration, we identify a Dirac-semimetal character. Theappearance of magnetism and Dirac-semimetal in MoSi2N4 ribbon can give rise tonovel physical properties, which could be useful in applications fornext-generation electronic devices.

Band-gap engineering, magnetic behavior and Dirac-semimetal character in the MoSi2N4 nanoribbon with armchair and zigzag edges