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Cold plasma technologies are an efficient approach to improve the germinationproperties of seeds, especially in a stacking configuration within a dielectricbarrier device. In such dry atmospheric plasma priming process, we show that aHe-N2 plasma treatment of 20 min can reduce the median germination time oflentil seeds from 1420 min to 1145 minutes, ie a gain in vigor of 275 min (or+19.4 %). Considering that this result depends on the plasma-seed interactionand therefore on the contact surfaces between the seeds and the plasma, atopographic modeling of a 100 seeds-stack is performed in the dielectricbarrier device. This model drives to the distinction between the seed-seedcontact surfaces (276 contacts standing for a total area of 230.6 mm2) and theseed-wall contact surfaces (134 contacts standing for a total area of 105.9mm2). After a single plasma treatment, the outer envelope of each seed is 92%exposed to plasma: a value high enough to support the relevance of the plasmaprocess but which also opens the way to process optimizations. In this outlook,we propose to replace the single 20-minute plasma treatment by a "plasmasequence", ie a succession of shorter plasma treatments whose total durationremains 20 min. Between two successive plasma treatments, the seeds can followeither a trapping procedure (seeds in same positions and orientations) or arandomizing procedure (seeds in same positions but reoriented) or a stirringprocedure (seeds vigorously shaken). A sequence of 10 plasma treatments (upon 2min) separated by short stirring procedures leads to a gain in vigor as high as405 min vs 275 min for a single plasma treatment of 20 min. We propose tounderstand these results by correlating the gain in vigor with the water uptakeof the seeds and the wettability state of their coating.

Cold plasma treatment of seeds: deciphering the role of contact surfaces through multiple exposures, randomizing and stirring