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Operation of semiconductor lasers in the 20--50 $\mu$m wavelength range ishindered by strong non-radiative recombination in the interband laser diodes,and strong lattice absorption in GaAs-based quantum cascade structures. Here,we propose an electrically pumped laser diode based on multiple HgTe quantumwells with band structure engineered for Auger recombination suppression. Usinga comprehensive model accounting for carrier drift and diffusion, electron andhole capture in quantum wells, Auger recombination, and heating effects, weshow the feasibility of lasing at $\lambda = 26...30$ $\mu$m at temperatures upto 90 K. The output power in the pulse can reach up to 8 mW formicrosecond-duration pulses.

Feasibility of lasing in the GaAs Reststrahlen band with HgTe multiple quantum well laser diodes