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Topological spin textures as an emerging class of topological matter offer amedium for information storage and processing. The recently discoveredtopological Hall effect (THE) is considered as a fingerprint for electricallyprobing non-trivial spin-textures. But the origin of THE in oxides has remainedelusive. Here we report an observation of the THE in ultrathin (unit cells.u.c.) 4d ferromagnetic SrRuO3 films grown on SrTiO3(001) substrates, which canbe attributed to the chiral ordering of spin structure (i.e., skyrmion-like) inthe single SrRuO3 layer without contacting 5d oxide SrIrO3 layer. It isrevealed that the RuO6 octahedral tilting induced by localorthorhombic-to-tetragonal structural phase transition exists across theSrRuO3/SrTiO3 interface, which naturally breaks the inversion symmetry. Ourtheoretical calculations demonstrate that the Dzyaloshinskii-Moriya (DM)interaction arises owing to the broken inversion symmetry and strong spin-orbitinteraction of 4d SrRuO3. This DM interaction can stabilize the N\'eel-typemagnetic skyrmions, which in turn accounts for the observed THE in transport.The RuO6 octahedral tilting-induced DM interaction provides a pathway towardthe electrical control of the topological spin textures and resultant THE,which is confirmed both experimentally and theoretically. Besides thefundamental significance, the understanding of THE in oxides and its electricalmanipulation presented in this work could advance the low power costtopological electronic and spintronic applications.

Oxygen-Octahedral-Tilting-Driven Topological Hall Effect in Ultrathin SrRuO3 Films