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ScN material is an emerging semiconductor with an indirect bandgap. It hasattracted attention for its thermoelectric properties, use as seed layers, andfor alloys for piezoelectric application. ScN or other transition metal nitridesemiconductors used for their interesting electrical properties are sensitiveto contaminants, such as oxygen or fluorine. In this present article, theinfluence of depositions conditions on the amount of oxygen contaminantsincorporated in ScN films were investigated and their effects on the electricalproperties (electrical resistivity and Seebeck coefficient) were studied. Theepitaxial-like films of thickness 125 +-5 nm to 155 +-5 nm were deposited byD.C.-magnetron sputtering on c-plane Al2O3, MgO(111) and r-plane Al2O3 at asubstrate temperature ranging from 700 to 950 degree C. The amount of oxygencontaminants presents in the film, dissolved into ScN or as an oxide, wasrelated to the adatom mobility during growth, which is affected by thedeposition temperature and the presence of twin domain growth. The lowestvalues of electrical resistivity of 50 micro-ohm cm were obtained onScN(111)/MgO(111) and on ScN(001)/r-plane Al2O3 grown at 950 degree C with notwin domains and the lowest amount of oxygen contaminant. At the best, thefilms exhibited an electrical resistivity of 50 micro-ohm cm with Seebeckcoefficient values maintained at -40 microV K-1, thus a power factor estimatedat 3.2 10-3 W m-1 K-2 (at room temperature).

Effect of impurities on morphology and growth mode of (111) and (001) epitaxial-like ScN films