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The electrical properties of thin TiO 2 films have recently been extensively exploited towards enabling a variety of metal-oxide electron devices: unipolar/bipolar semiconductor devices and/or memristors. In such efforts, investigations on the role of TiO 2 as active material have been the main focus, however, electrode materials are equally important. In this work, we address this need by presenting a systematic quantitative electrical characterization study on the interface characteristics of Metal-TiO 2 -Metal structures. Our study employs typical contact materials that are used both as top and bottom electrodes in a Metal-TiO 2 -Metal setting. This allows investigating the characteristics of the interfaces as well as holistically studying an electrode’s influence to the opposite interface, referred to in this work as top/bottom electrodes interrelationship. Our methodology comprises the recording of current-voltage (I-V) characteristics from a variety of solid-state prototypes in the temperature range of 300-350 K and by analysing them through appropriate modelling. Clear field and temperature dependent signature plots were also obtained towards shinning more light on the role of each material as top/bottom electrodes in Metal-TiO 2 -Metal configurations. Our results highlight that these are not conventional metal-semiconductor contacts and several parameters such as the electrodes position (atop or below the film), the electronegativity, the interface states and even the opposite interface electrode material are involved on the formation of the interfacial barriers. Overall our study provides a useful database for selecting appropriate electrode materials in TiO 2 based devices, offering new insights on the role of electrodes on metal-oxide electronics applications.

Electrical characteristics of interfacial barriers at metal—TiO2 contacts

Electrical characteristics of interfacial barriers at metal—TiO₂ contacts