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Mn$_2$VAl Heusler alloy films were epitaxially grown on MgO(100) singlecrystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 andL2$_1$ type Mn$_2$VAl order was controlled by the deposition temperatures.A2-type Mn$_2$VAl films showed no spontaneous magnetization and L2$_1$-typeMn$_2$VAl films showed ferrimagnetic behavior with a maximum saturationmagnetization of 220 emu/cm$^3$ at room temperature. An antiferromagneticreflection was observed with neutron diffraction at room temperature for anA2-type Mn$_2$VAl film deposited at 400$^\circ$C. A bilayer sample of theantiferromagnetic A2 Mn$_2$VAl and Fe showed an exchange bias of 120 Oe at 10K.

Mn$_2$VAl Heusler alloy thin films: Appearance of antiferromagnetism and an exchange bias in a layered structure with Fe