Open AccessNanostructured 2D cellular materials in silicon by sidewall transfer lithography NEMS
Author(s) -
R.R.A. Syms,
Dixi Liu,
Munir M. Ahmad
Publication year - 2017
Publication title -
journal of micromechanics and microengineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.494
H-Index - 132
eISSN - 1361-6439
pISSN - 0960-1317
DOI - 10.1088/1361-6439/aa7167
Subject(s) - nanoelectromechanical systems , materials science , silicon , lithography , honeycomb , fabrication , poisson's ratio , nanomanufacturing , nanotechnology , diamond , reactive ion etching , transfer printing , etching (microfabrication) , composite material , optoelectronics , poisson distribution , nanoparticle , medicine , nanomedicine , statistics , alternative medicine , mathematics , pathology , layer (electronics)
Sidewall transfer lithography (STL) is demonstrated as a method for parallel fabrication of 2D nanostructured cellular solids in single-crystal silicon. The linear mechanical properties of four lattices (perfect and defected diamond; singly and doubly periodic honeycomb) with low effective Young's moduli and effective Poisson's ratio ranging from positive to negative are modelled using analytic theory and the matrix stiffness method with an emphasis on boundary effects. The lattices are fabricated with a minimum feature size of 100 nm and an aspect ratio of 40:1 using single- and double-level STL and deep reactive ion etching of bonded silicon-on-insulator. Nanoelectromechanical systems (NEMS) containing cellular materials are used to demonstrate stretching, bending and brittle fracture. Predicted edge effects are observed, theoretical values of Poisson's ratio are verified and failure patterns are described
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