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The Raman shifts of nanocrystalline GaSb excited by an Ar+ ion laser ofwavelengths 514.5, 496.5, 488.0, 476.5, and 457.9 nm are studied by experimentand explained by phonon confinement, tensile stress, resonance Raman scatteringand quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSbnanocrystals strongly support the Raman feature of GaSb nanocrystals.Calculated optical spectra compare well with experimental data on Ramanscattering GaSb nanocrystals.

Raman properties of GaSb nanoparticles embedded in SiO 2 films

Raman properties of GaSb nanoparticles embedded in SiO ₂ films