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Guided growth of semiconductor nanowires in nanotube templates has beenconsidered as a potential platform for reproducible integration of III-Vs onsilicon or other mismatched substrates. Herein, we report on the challenges andprospects of molecular beam epitaxy of InAs nanowires on SiO2/Si nanotubetemplates. We show how and under which conditions the nanowire growth isinitiated by In-assisted vapor-liquid-solid growth enabled by the localconditions inside the nanotube template. The conditions for high yield ofvertical nanowires are investigated in terms of the nanotube depth, diameterand V/III flux ratios. We present a model that further substantiates ourfindings. This work opens new perspectives for monolithic integration of III-Vson the silicon platform enabling new applications in the electronics,optoelectronics and energy harvesting arena.

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si