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The combination of h-BN and high-k dielectrics is required for a top gateinsulator in miniaturized graphene field-effect transistors because of the lowdielectric constant of h-BN. We investigated the deposition of Y2O3 on h-BNusing atomic layer deposition. The deposition of Y2O3 on h-BN was confirmedwithout any buffer layer. An increase in the deposition temperature reduced thesurface coverage. The deposition mechanism could be explained by thecompetition between the desorption and adsorption of the Y precursor on h-BNdue to the polarization. Although a full surface coverage was difficult toachieve, the use of an oxidized metal seeding layer on h-BN resulted in a fullsurface coverage.

Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs