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We perform {\textit ab initio} calculations for the strain-induced formationof non-hexagonal-ring defects in graphene, graphane (planar CH), and graphenol(planar COH). We find that the simplest of such topological defects, theStone-Wales defect, acts as a seed for strain-induced dissociation andmultiplication of topological defects. Through the application of inhomogeneousdeformations to graphene, graphane and graphenol with initially smallconcentrations of pentagonal and heptagonal rings, we obtain several novelstable structures that possess, at the same time, large concentrations ofnon-hexagonal rings (from fourfold to elevenfold) and small formation energies.

Non-hexagonal-ring defects and structures induced by strain in graphene and in functionalized graphene