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In this paper, we report on the fabrication and the low-temperaturecharacterization of extremely high-ohmic microstrip resistors made of a thinfilm of weakly oxidized titanium. Nearly linear voltage-current characteristicswere measured at temperatures down to $T \sim \unit[20]{mK}$ for films withsheet resistivity up to as high as $\sim \unit[7]{k\Omega}$, i.e. about anorder of magnitude higher than our previous findings for weakly oxidized Cr.Our analysis indicates that such an improvement can help to create anadvantageous high-impedance environment for different Coulomb blockade devices.Further properties of the Ti film addressed in this work show a promise oflow-noise behavior of the resistors when applied in different realizations ofthe quantum standard of current.

Ultra-high-ohmic microstripline resistors for Coulomb blockade devices