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The formation of a novel surface reconstruction upon Co deposition on freshlycleaved Ge(111)2x1 surfaces is studied by means of scanning tunnelingmicroscopy (STM) at low temperature. The deposited Co atoms are immobile atsubstrate temperatures of 4.5K, while they can diffuse along the upperpi-bonded chains at a temperature of 80K and higher. This mobility results inaccumulation of Co atoms at atomic steps, at domain boundaries as well as onatomically flat Ge terraces at, e.g., vacancies or adatoms, where reconstructedCo/Ge intermixing layers are formed. Voltage dependent STM images reveal thatthe newly reconstructed surface locally exhibits a highly ordered atomicstructure, having the same periodicity as that of the initial 2x1reconstruction. In addition, it shows a double periodicity along the [2-1-1]direction, which can be related to the modified electronic properties of thepi-bonded chains.

Formation of Co/Ge intermixing layers after Co deposition on Ge(111)2x1 surfaces