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III-V growth and surface conditions strongly influence the physical structureand resulting optical properties of self-assembled quantum dots (QDs). Beyondthe design of a desired active optical wavelength, the polarization response ofQDs is of particular interest for optical communications and quantuminformation science. Previous theoretical studies based on a pure InAs QD modelfailed to reproduce experimentally observed polarization properties. In thiswork, multi-million atom simulations are performed to understand thecorrelation between chemical composition and polarization properties of QDs. Asystematic analysis of QD structural parameters leads us to propose a two layercomposition model, mimicking In segregation and In-Ga intermixing effects. Thismodel, consistent with mostly accepted compositional findings, allows toaccurately fit the experimental PL spectra. The detailed study of QD morphologyparameters presented here serves as a tool for using growth dynamics toengineer the strain field inside and around the QD structures, allowing tuningof the polarization response.

Polarization Response in InAs Quantum Dots: Theoretical Correlation between Composition and Electronic Properties