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The electroluminescence (EL) at 1.54νm of metaloxidesemiconductor (MOS) devices with Er 3+ ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO 2 layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er 3+ emission under an alternate pulsed voltage signal (APV). Energy transfer from silicon nanoclusters (Si-ncs) to Er 3+ is clearly observed at low-field APV excitation. We demonstrate that sequential electron and hole injection at the edges of the pulses creates excited states in Si-ncs which upon recombination transfer their energy to Er 3+ ions. On the contrary, direct impact excitation of Er 3+ by hot injected carriers starts at the FowlerNordheim injection threshold (above 5MVcm 1) and dominates for high-field APV excitation.Peer Reviewe

Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation