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We report strategies of achieving both high assembly yield of carbonnanotubes at selected position of the circuit via dielectrophoresis (DEP) andfield effect transistor (FET) yield using semiconducting enriched single walledcarbon nanotube (s-SWNT) aqueous solution. When the DEP parameters wereoptimized for the assembly of individual s-SWNT, 97% of the devices show FETbehavior with a maximum mobility of 210 cm2/Vs, on-off current ratio ~ 106 andon conductance up to 3 {\mu}S, however with an assembly yield of only 33%. Asthe DEP parameters were optimized so that 1-5 s-SWNTs are connected perelectrode pair, the assembly yield was almost 90% with ~ 90% of these assembleddevices demonstrating FET behavior. Further optimization gives an assemblyyield of 100% with up to 10 SWNT/site, however with a reduced FET yield of 59%.Improved FET performance including higher current on-off ratio and highswitching speed were obtained by integrating a local Al2O3 gate to the device.Our 90% FET with 90% assembly yield is the highest reported so far for carbonnanotube devices. Our study provides a pathway which could become a generalapproach for the high yield fabrication of CMOS compatible carbon nanotubeFETs.

A general approach for high yield fabrication of CMOS compatible all semiconducting carbon nanotube field effect transistors