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One of severe limits of graphene nanoribbons (GNRs) in future applications isthat zigzag GNRs (ZGNRs) are gapless, so cannot be used in field effecttransistors (FETs). In this paper, using tight-binding approach and firstprinciples method, we derived and proved a general edge (boundary) conditionfor the opening of a significant bandgap in ZGNRs with defective edgestructures. The proposed semiconducting GNRs have some interesting propertiesincluding the one that they can be embedded and integrated in a large piece ofgraphene without the need of completely cutting them out. We also demonstrateda new type of high-performance all-ZGNR FET.

Bandgap engineering of zigzag graphene nanoribbons by manipulating edge states via defective boundaries