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From electrodeless time-resolved microwave conductivity measurements, theefficiency of charge carrier generation, their mobility, and decay kinetics onphoto-excitation were studied in arrays of Si nanowires grown by thevapor-liquid-solid mechanism. A large enhancement in the magnitude of thephotoconductance and charge carrier lifetime are found depending on theincorporation of impurities during the growth. They are explained by theinternal electric field that builds up, due to a higher doped sidewalls, asrevealed by detailed analysis of the nanowire morphology and chemicalcomposition.

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient