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We present a novel shadow evaporation technique for the realization ofjunctions and capacitors. The design by E-beam lithography of stronglyasymmetric undercuts on a bilayer resist enables in-situ fabrication ofjunctions and capacitors without the use of the well-known suspended bridge[1].The absence of bridges increases the mechanical robustness of the resist maskas well as the accessible range of the junction size, from 0.01 to more than10000 micron square. We have fabricated Al/AlOx/Al Josephson junctions, phasequbit and capacitors using a 100kV E- beam writer. Although this high voltageenables a precise control of the undercut, implementation using a conventional20kV E-beam is also discussed. The phase qubit coherence times, extracted fromspectroscopy resonance width, Rabi and Ramsey oscillations decay and energyrelaxation measurements, are longer than the ones obtained in our previoussamples realized by standard techniques. These results demonstrate the highquality of the junction obtained by this controlled undercut technique.

Novel E-beam lithography technique for in-situ junction fabrication: the controlled undercut