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We discuss the origin of an additional dip other than the charge neutralitypoint observed in transfer characteristics of graphene-based field-effecttransistors. The double-dip is proved to arise from charge transfer betweengraphene and metal electrodes, while charge storage at the graphene/SiO2interface enhances it. Considering different Fermi energy from the neutralitypoint along the channel and partial charge pinning at the contacts, we proposea model which explains all features in gate voltage loops.

Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors