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We have fabricated suspended few layer (1-3 layers) graphene nanoribbon fieldeffect transistors from unzipped multiwall carbon nanotubes. Electricaltransport measurements show that current-annealing effectively removes theimpurities on the suspended graphene nanoribbons, uncovering the intrinsicambipolar transfer characteristic of graphene. Further increasing the annealingcurrent creates a narrow constriction in the ribbon, leading to the formationof a large band-gap and subsequent high on/off ratio (which can exceed 104).Such fabricated devices are thermally and mechanically stable: repeated thermalcycling has little effect on their electrical properties. This work shows forthe first time that ambipolar field effect characteristics and high on/offratios at room temperature can be achieved in relatively wide graphenenanoribbon (15 nm ~50 nm) by controlled current annealing.

Room-Temperature High On/Off Ratio in Suspended Graphene Nanoribbon Field Effect Transistors