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Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular BeamEpitaxy growth method is studied in dependence of growth temperature, with theobjective of maximizing the indium incorporation. Nanowire growth was achievedfor growth temperatures as low as 550{\deg}C. The incorporation of indium wasstudied by low temperature micro-photoluminescence spectroscopy, Ramanspectroscopy and electron energy loss spectroscopy. The results show that theincorporation of indium lowering the growth temperature does not have an effectin increasing the indium concentration in the bulk of the nanowire, which islimited to 3-5%. For growth temperatures below 575{\deg}C, indium rich regionsform at the surface of the nanowires as a consequence of the radial growth.This results in the formation of quantum dots, which exhibit extremely sharpluminescence.

Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots